Silicon NPN Photodarlington Optoisolator, 6-Pin DIP

High-Isolation Photodarlington Output Optoisolator

The NTE3045 optoisolator features a gallium arsenide infrared LED optically coupled to a silicon NPN photodarlington transistor, all contained within a 6-pin dual in-line (DIP) package. Designed for demanding applications, this component provides high electrical isolation between input and output circuits, making it ideal for control systems, feedback circuits, and electronic switching applications.

Key Features and Applications

• High input-to-output isolation voltage: 7500V (peak)
• Collector-Emitter Breakdown Voltage: 80V (minimum)
• High current transfer ratio (CTR) for sensitive interface requirements
• Reliable gallium arsenide LED emitter with silicon photodarlington output
• Encapsulated in a standard 6-pin DIP package for easy through-hole mounting
• Ideal for applications such as telephone relay drivers, phase and feedback controls, solid-state relays, and signal coupling where high-voltage isolation is critical

Technical Specifications

• Input LED Reverse Voltage (VR): 3V
• Continuous Forward Current (IF): 60mA
• LED Power Dissipation (PD): 120mW at 25C
• Collector-Emitter Breakdown Voltage (V(BR)CEO): 80V (min)
• Isolation Voltage (VISO): 7500V (peak)
• Package: 6-pin DIP

Usage Notes

To maintain optimal reliability, observe the maximum ratings for forward current and power dissipation. Recommended for use in environments where robust isolation and high input sensitivity are required, including industrial process controls, telecommunication interfaces, and high-voltage feedback systems.

Part Number: NTE3045

This part is the equivalent replacement for the following:

179-56228-20, 179-56228-21, 2-2820, 2-2821, 561-4538-310, 56228-20, 56228-21, ECG3045, H11AX, M0C8050, MOC8020, MOC8050, NTE3045, PC715V, SK10327, SK10327/3045, T1L119