NTE4164, NMOS 64K (65,536 x 1) Dynamic RAM (DRAM) 150nS ~ 16 Pin DIP (ECG4164)

FEATURES:

• NMOS 64K (65,536 x 1) Dynamic RAM (DRAM) 150nS
• Maximum Access Time: 150ns
• 65,536 x 1 Organization
• Single +5V Supply (10% Tolerance)
• Upward Pin Compatible with 4116 (16K Dynamic RAM)
• Max Access Time from RAS: Less than 150ns
• Min Cycle Time (Read or Write): Less than 260ns
• Long Refresh Period: 4 milliseconds
• Low Refresh Overhead Time: As Low As 1.8% of Total Refresh Period
• All Inputs, Outputs, Clocks Fully TTL Compatible
• 3State Unlatched Outputs
• PageMode Operation for Faster Access
• Low Power Dissipation: Operating – 135mW (Typ); Standby – 17.5mW (Typ)
• 16 Pin DIP Package
• Replaces ECG4164