The IRF830PBF is a robust N-Channel MOSFET designed for high-voltage, high-speed switching applications. With a drain-to-source voltage rating of 500V and a continuous drain current of 4.5A at 25C, it is well-suited for use in power supplies, motor control circuits, and other demanding electronic systems.

Very Similar to an NTE 2398

Key Features:

• High Voltage Capability: Supports a maximum drain-to-source voltage (Vdss) of 500V, making it suitable for high-voltage applications.

• Significant Current Handling: Capable of continuous drain current (Id) up to 4.5A at 25C, accommodating substantial power loads.

• Efficient Switching Performance: Features a gate charge (Qg) of 38 nC at 10V, facilitating rapid switching with minimal delay.

• Low On-Resistance: Exhibits a maximum Rds(On) of 1.5 Ohms at 2.7A and 10V, ensuring efficient conduction with reduced power loss.

• Thermal Stability: Designed to operate effectively across a wide temperature range, maintaining performance in varying environmental conditions.

Technical Specifications:

This MOSFET is ideal for applications requiring high-speed switching and efficient power management, such as inverters, converters, and motor drivers. Its high voltage and current ratings, combined with low on-resistance, make it a reliable choice for demanding electronic designs.