NTE342, NPN Silicon 136MHz – 175MHz RF Transistor 35V@2A, 7W Maximum Power Output ~ TO-220 (ECG342).

This is a silicon NPN epitaxial planer type transistor designed for use as an RF power amplifier on VHFband mobile radio applications.

FEATURES:

• High Power Gain: Gpe 10dB (VCC = 13.5V, PO = 6W, f = 175MHz)
• Ability to Withstand more than 20:1 VSWR Load when Operated at:
  VCC = 15.2V, PO = 6W, f = 175MHz
• Application: 4 to 5 Watt Output Power Amplifiers Applications in VHF band

SPECIFICATIONS:

• Vcbo: 35V
• Vceo: 17V
• Vebo: 4V
• Ic: 2A
• Power Output, Po: 7W
• Power Dissipation, Pd: 12.5W
• Gain, hFE: 50 Typical
• fT: 136MHz – 175MHz
• Package/Case: TO-220
• Replaces: ECG342