0
Sale!
NTE337 NPN Silicon RF Transistor 18V@2A, 8W Max ~ 27 to 50MHz. RF-38S

NTE337 NPN Silicon RF Transistor 18V@2A, 8W Max ~ 27 to 50MHz. RF-38S

NTE337 NPN Silicon RF Transistor 18V@2A, 8W Max ~ 27 to 50MHz. RF-38S PackageThe NTE337 isa silicon NPN RF power transistor designed for use in large signal amplifier driver and predriver stages. This device is intended for use in industrial communications

$25.17 $41.95
SKU: UC447645966120 Category:

NTE337 NPN Silicon RF Transistor 18V@2A, 8W Max ~ 27 to 50MHz. RF-38S Package

The NTE337 isa silicon NPN RF power transistor designed for use in large signal amplifier driver and predriver stages. This device is intended for use in industrial communications equipment operating at frequencies up to 80MHz.

Replaces ECG337

Specified 12.5 Volt, 50MHz Characteristics:

  • Collector-Emitter Voltage Vceo: 18V Maximum
  • Collector Current Ic: 2 Amps
  • Output Power: 8 Watts
  • Minimum Gain: 10dB
  • Package: RF-38S

Reviews

There are no reviews yet.

Be the first to review “NTE337 NPN Silicon RF Transistor 18V@2A, 8W Max ~ 27 to 50MHz. RF-38S”

Your email address will not be published. Required fields are marked *

Related products

TIP42C, 6A@100V PNP Silicon Medium Power Switch Transistors ~ TO-220

TIP42C, 6A@100V PNP Silicon Medium Power Switch Transistors ~ TO-220

$5.00 $11.00
Add To Cart
2 Pack of TIP112, 2A @ 100V NPN Silicon Darlington Transistors ~ TO-220

2 Pack of TIP112, 2A @ 100V NPN Silicon Darlington Transistors ~ TO-220

$8.00 $10.00
Add To Cart
2 Pack of TIP42, 6A@40V PNPN Silicon Medium Power Switch Transistors ~ TO-220

2 Pack of TIP42, 6A@40V PNPN Silicon Medium Power Switch Transistors ~ TO-220

$9.00 $12.00
Add To Cart
1N5401-10pk MVO 3 Amp 100 Volt Rectifier Diodes 3A 100V

1N5401-10pk MVO 3 Amp 100 Volt Rectifier Diodes 3A 100V

$9.00 $14.00
Add To Cart

Start typing and press Enter to search